Electron beam lithography, using the Thermal Field Emission electron gun, is quick and also fabricates the finest features of any lithographic method. The S100 is a full capability electron beam lithography tool for wafers, masks and substrates up to 4 inches in size, designed for use in university and industry laboratories and available at a reasonable and affordable price. It provides, to the highest standards, all of the essential capabilities for nano-engineering, MEMS and semiconductor fabrication. 4 inches x 4 inches is the biggest area that can be exposed in a practical period of time, using a focused, vector scanned electron beam, and so is the largest sensible sample size for most users and most purposes. This size enables an economical design, abjuring the extravagances required for 6 or 8 inch wafers and the consequent high prices of some other lithography systems. The 50keV beam voltage reduces proximity effects, compared with 30 kV systems. The lithography system is controlled by a Windows XP PC. It provides import and editing for CAD files, advanced pattern generation and control, proximity effect correction, a flexible, high resolution, SEM capability and a closed loop laser interferometer controlled stage, with 2.5nm beam-on-substrate positioning resolution. This gives full beam access to the exposure areas of 4 inch wafers. Download the S100 Brochure or if funds are limited and you need an SEM solution visit our LS100 page.

• S100 E-beam lithography system
  
  
• XY laserstage